Manufacture of semiconductor connection components with frangible lead sections

ABSTRACT

A semiconductor chip connection component having numerous leads extending side-by-side across a gap in a support structure, each lead having a frangible section to permit detachment of one end of the lead from the support structure in a bonding process. The frangible sections are formed by treating the lead-forming material in an elongated treatment zone extending across the regions occupied by numerous leads. The process avoids the need for especially fine etching to form notches in the lateral edges of the leads.

FIELD OF THE INVENTION

The present invention relates to connection components useful inelectrical assemblies such as in connecting semiconductor chips tosubstrates, and to methods of making such connection components.

BACKGROUND OF THE INVENTION

Semiconductor chips typically are connected to external circuitrythrough contacts on surface of the chip. The contacts may be disposed ina grid on the front surface of the chip or in elongated rows extendingalong the edges of the chip front surface. Each such contact must beconnected to an external circuit element such as a circuit trace on asupporting substrate or circuit panel. In the conventional wire bondingprocess, the chip is physically mounted on the substrate. A bonding toolbearing a fine wire is engaged with an individual contact so as to bondthe wire to the contact. The tool is then moved to a contact pad of thecircuit on the substrate while dispensing wire through the tool untilthe tool engages the contact pad on the substrate and the wire is bondedthereto. This process is repeated for each contact.

In a tape automated bonding or "TAB" process, a dielectric supportingtape is provided with a hole slightly larger than the chip. Metallicleads are provided on the dielectric tape. An inner end of each leadprojects inwardly beyond the edge of the hole. These plural leads arearranged side-by-side in rows. Each row of contacts on the chip isaligned with one such row of leads. The inner ends of the leads arebonded to the contacts of the chip by ultrasonic or thermocompressionbonding. The outer ends of the leads are connected to the externalcircuitry.

The rapid evolution of the semiconductor art has created continueddemand for incorporation of progressively greater numbers of contactsand leads in a given amount of space. With such closely spaced contacts,the leads connected to the contacts of the chip must be extremely finestructures, typically less than about 0.1 mm wide, disposed atcenter-to-center spacings of about 0.1 mm or less. Handling andconnecting such fine, closely-spaced leads poses a formidable problem.

International Patent Publication WO94/03036, published 3 Feb. 1994 oncopending International Application PCT/US93/06930, the disclosure ofwhich is hereby incorporated by reference herein, offers a solution tothese problems. As disclosed in the '036 publication, a semiconductorchip connection component may include a plurality of electricallyconductive leads and may also include a support structure such as aflexible, dielectric film with a compliant, typically elastomericunderlayer disposed beneath the flexible film. Each such lead desirablyis connected to a terminal disposed on the surface of the supportstructure. A connection section of each lead extends across a gap in thesupport structure. A first end of each connection section, connected toone of the terminals, is permanently attached to the support structure,whereas the opposite, second end of the connection section is releasablyattached to the support structure. For example, the second end of eachconnection section may be connected through a frangible sectionconnecting the second end to a bus structure anchored on the supportstructure.

Certain preferred connection components disclosed in the '036publication have numerous elongated leads disposed side-by-side with theconnection sections of the various leads extending across a common gapin the form of a slot in the support structure. In certain processesaccording to the '036 publication, the connection component isjuxtaposed with the chip so that the support structure, and preferably acompliant layer thereof, overlies the contact-bearing surface of thechip and so that the gap or slot in the support structure is alignedwith a row of contacts on the chip. This process serves to align eachconnection section with a contact on the chip. After placement of theconnection component on the chip, each lead is engaged by a bondingtool. The bonding tool moves downwardly, towards the surface of thechip. As the bonding tool moves downwardly, it disengages the second endof each lead connection section from the support structure, as bybreaking the frangible section of the lead, and moves the connectionsection downwardly into engagement with the chip contact. At the sametime, guide surfaces on the bottom of the bonding tool engage theconnection section and guide it into more precise alignment with theassociated contact. The bonding tool then bonds the connection sectionto the contact.

The end-supported lead bonding processes according to preferred aspectsof the '036 publication offer numerous advantages. Because each lead issupported at both ends prior to bonding, it can be maintained inposition until it is captured by the bonding tool. The bonding tool willreliably capture the correct lead, and hence there is little chance thatan incorrect lead will be bonded to a contact. The process can beperformed at reasonable cost. Moreover, the products resulting frompreferred processes according to the '036 publication, allow freemovement of the terminals on the support structure relative to the chipafter connection, both in the X and Y directions, parallel to the chipsurface, and in the Z or compliance direction perpendicular to the chipsurface. Thus, the assembly can be readily tested by engaging a multipleprobe test fixture with the terminals. When the terminals on the supportstructure are bonded to contact pads of a substrate, as by solderbonding or other processes, the assembly can compensate for differentialthermal expansion between the chip and the substrate, as by flexing ofthe leads and deformation of the flexible support structure.

Certain components and processes according to the '036 publication canbe used to fabricate semiconductor chip assemblies with closely spacedleads. Merely by way of example, rows of connection section may beprovided side-by-side at center-to-center spacings of about 100micrometers or less, and may be successfully bonded to the contacts ofthe chip. Additional improvements in the bonding structures andtechniques, as set forth in the copending, commonly assigned U.S. patentapplication Ser. No. 08/308,741 of Thomas DiStefano et al., filed Sep.19, 1994 entitled Microelectronic Bonding With Lead Motion, now U.S.Pat. No. 5,491,302 and in copending-pending commonly assigned U.S.patent application Ser. No. 08/096,693, filed Jul. 23, 1993, now U.S.Pat. No. 5,398,863 the disclosures of which are hereby incorporated byreference herein, still further facilitate bonding of closely spacedleads and formation of reliable assemblies even where the leads areextremely small, using the basic techniques set forth in the '036publication.

However, manufacture of the preferred connection components for use inthese processes has heretofore required precise control of photoformingprocesses. The leads utilized in certain end-supported lead bondingprocesses have incorporated connection sections of substantially uniformwidths and frangible sections having widths less than the width of theconnection section. For example, the frangible section may be defined bya pair of V-shaped notches extending inwardly towards one another in thewidthwise direction from laterally opposite edges of the connectionsection. The width between the points of the V is substantially lessthan the width of the remaining portion of the connection section.Although this arrangement provides useful frangible sections, it imposesstringent requirements on the photoforming process. The process must becapable of forming feature sizes as small as the smallest width withinthe frangible section. Stated another way, the photoforming process mustbe more precise than required to form the connection sectionsthemselves.

There has, accordingly, been a desire heretofore for improved methods ofmaking connection components useful in end-supported lead bonding andfor improved connection components. In particular, there has been adesire for processes which mitigate the requirement for precisephotoforming steps in fabrication of such connection components.

SUMMARY OF THE INVENTION

The present invention addresses these needs:

One aspect of the present invention provides methods of making asemiconductor connection component. Methods according to this aspect ofthe invention desirably include the step of forming a plurality ofleads, each extending over a gap in a support structure, each such leadincluding lead-forming material in an elongated, strip-like lead regionextending in a lead direction. The methods further include the step offorming frangible sections in the leads by applying a weakeningtreatment to lead-forming material throughout an elongated treatmentzone extending across a plurality of the lead regions transverse to thelead directions. Thus, the weakening treatment is applied without regardto the edge boundaries of the leads. Desirably, the lead regions extendside-by-side substantially parallel to one another in a common leaddirection and the elongated treatment zone is substantially straight andextends transverse to this common lead direction. Thus, a row of leadsextending side-by-side can be provided with weakened frangible regions.The weakening treatment may be applied after formation of the individualleads. Where the leads are formed in an additive plating process, thelead material may be deposited in the strip-like lead regions, andsubsequently exposed to the weakening treatment. As discussed furtherbelow, the weakening treatment may include exposure to radiant energy,chemical etchants or alloying agents, or mechanical deformation by atool. These treatments can be applied after formation of the leadsthroughout the treatment zone. For example, radiant energy or chemicalagents can be applied using a mask having an elongated slot defining thetreatment zone extending across plural lead regions. There is no need tocontrol the extent of the weakening treatment precisely in thewidth-wise direction of the leads, transverse to the leads themselves.The process used to form the leads need not provide features any finerthan the width of the individual lead connection sections themselves.Stated another way, the width of each lead connection section can be asfine as the finest feature size permitted by the photoforming process.

According to further aspects of the invention, the weakening treatmentcan be applied before or during the lead-forming step. For example,where leads are formed by subtractively etching a continuous layer oflead-forming material to form the individual leads, weakening treatmentsas mentioned above can be applied to the continuous layer along asimilar elongated treatment zone before or during the etching step.Also, where the lead-forming process includes an additive platingprocess, the weakening treatment may include interrupting or partiallyinterrupting the additive plating process within the elongated treatmentzone. Thus, the substrate upon which the leads are formed may beprovided with an elongated upstanding ridge extending through thetreatment zone, so that the deposited material forms a notch surroundingthe ridge during the deposition process itself. In these methods aswell, the photoforming process used to make the leads need not createany feature finer than the width of the lead connection zonesthemselves.

As mentioned above, the weakening treatment may include application ofradiant energy, as, for example, by directing radiant energy into a maskhaving a slot corresponding to the treatment zone, or by scanning anarrow beam of radiant energy, such as a laser beam, across thetreatment zone. Intense radiant energy may ablate the lead-formingmaterial in the treatment zone. Where the lead-forming material issusceptible to etching as, for example, where the lead-forming materialis a copper or copper-based alloy, a similar slot-like mask may be usedto control application of an etchant. Certain lead-forming materialssuch as gold, are susceptible to weakening by alloying agents. Thealloying agent can be applied to gold lead-forming materials in thetreatment zone either before or after formation of the individual leads.

The component fabrication process desirably also includes the step oftreating the support structure to form a gap aligned with the leadconnection sections and, desirably, also encompassing the weakenedregions of the leads created within the treatment zone. For example, thesupport structure may be treated by etching or by laser ablation.Typically, the support structure includes a thin, flexible, polymericfilm such as a polyimide. The support structure may be treated to formthe gap either before or after formation of the leads and before orafter application of the weakening treatment.

Further aspects of the invention provide semiconductor connectioncomponents. The connection components desirably include a plurality ofleads extending across a gap in a support structure, preferablyside-by-side and parallel to one another. Each such lead has alengthwise dimension in the direction across the gap and a widthwisedimension transverse to the lengthwise direction. Each such lead has aconnection section and a frangible section adjacent the connectionsection. The widthwise dimension of each lead within the connectionsection and the frangible section desirably is substantially constant.Thus, each lead may include a metal in a bond region and an alloy of thefirst metal with an alloying agent in the frangible region.Alternatively or additionally, the thickness of each lead perpendicularto the widthwise and lengthwise dimensions may be smaller in thefrangible section than in the connection section.

These and other objects, features and advantages of the presentinvention will be more readily apparent from the detailed description ofthe preferred embodiments set forth below, taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a fragmentary, diagrammatic plan view of a component inaccordance with one embodiment of the present invention.

FIG. 2 is fragmentary, diagrammatic perspective view depicting a portionof the component illustrated in FIG. 1 during one stage of amanufacturing process in accordance with an embodiment of the invention.

Each of FIGS. 3, 4 and 5 is a view similar to FIG. 2 but depicting thecomponent at successively later stages of the process.

FIGS. 6, 7, 8, and 9 are views similar to FIG. 2 but depicting processesaccording to further embodiments of the invention.

FIG. 10 is diagrammatic fragmentary top plan view of a component inaccordance with another embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A component in accordance with one embodiment of the invention ismanufactured in the form of a continuous tape 28. The tape includes aplurality of components each incorporating a support structure 30. Thesupport structure of each component incorporates a flexible, sheet-likedielectric layer 32 and also includes a soft, compliant layer 102 (FIG.5), the compliant layer lying beneath the flexible dielectric layer 32.The support structure of each component has gaps in the form of slots 40extending through it from its top surface to its bottom surface so as tosubdivide the support structure of each component into a central portion42 and a peripheral portion 44. The gaps merge with one another so thatthe central portion 42 of each component is not connected to theperipheral portion of the support structure by any other portion of thesupport structure. Rather, as discussed below, the central portion 42 istemporarily connected to the peripheral portion 44 of the supportstructure by the leads extending across gaps 40. The tape may beprovided with features such as sprocket holes to facilitate feeding andmovement of the tape in production processes.

Each component in accordance with this embodiment has a plurality ofelongated electrically conductive buses 53 extending on the peripheralportion 44 of the dielectric layer alongside slots 40 so that one suchbus extends alongside of, and substantially co-directionally with, eachsuch slot. The buses 53 of each component form a generally rectilinear,hooplike structure encircling the gaps 40 and the central portion 42 ofthe support structure. Each component further has terminals 48 disposedon the central portion 42 of the support structure and a plurality ofleads 52 extending outwardly from the terminals. Each lead 52 (FIG. 5)includes a first end securement section 66 on central portion 42; aconnection section 56 extending outwardly across one of the gaps orslots 40 from the first end securement section; a frangible section 72joined to the second or outer end of the connection section and a secondend securement section 70 joining the frangible section 72 to the bus 53lying alongside of the slot 40. As shown in FIG. 5, the frangiblesections 72 lie just inside the outer margins of slots 40. Theconnection sections of all of the leads associated with any given slotextend generally perpendicular to the slot and generally side-by-sideparallel to one another in a lead direction W. In the conditionillustrated, the connection sections 56 and frangible sections 72 of theleads bridge gaps 40 and physically connect the central portion 42 ofthe support structure with the peripheral portion 44.

The general arrangement of the foregoing features may be substantiallyas illustrated in International Patent Publication WO94/03036.

Components as illustrated in FIG. 1 can be made by a process asschematically illustrated in FIGS. 2-5. At the beginning of the process(FIG. 2), dielectric layer 32 is continuous and does not have the gaps40 therein. While the dielectric layer is in this condition, buses 53,leads 52 and terminals 48 are formed from a conductive lead-formingmaterial, such as gold, copper or alloys, by additive electroplatingusing a photographically patterned resist (not shown) with open areascorresponding to the buses, leads and terminals where plating isdesired, or by subtractive etching from a continuous sheet of thelead-forming metallic material on the dielectric layer using aphotographically patterned resist to permit etching only in areas wherethe lead-forming material is to be removed. The steps of the additiveelectroplating or subtractive etching processes may be performed ingenerally conventional ways. However, in this process the buses 53provide electrical continuity to all of the leads and terminals.

Although only a few leads and terminals are illustrated in the drawings,it should be appreciated that a typical component may include hundredsof leads and terminals. Also, although the few terminals 48 illustratedin FIG. 2 are side-by-side, in practice the terminals are distributedover substantially the entire interior portion 42 of the dielectriclayer. The portions of the leads which will form the connection sectionsare disposed in rows. Within each row, all of the lead connectionsections extend in a lead direction L, and adjacent leads are spacedapart from one another in a widthwise direction W. The widthwisedimension of each lead desirably is between about 15 microns and about50 microns whereas the center-to-center spacing between adjacent leadsdesirably is about 50 to about 100 microns. Each bus 53 desirably isabout 50 to about 200 microns or more wide. At this stage of theprocess, all of the plated features have substantially uniform thicknessin direction T transverse to the lengthwise and widthwise directions andperpendicular to the plane of the dielectric layer. The thicknessdesirably is between about 10 to about 30 microns. The aforementionedfeature sizes can be achieved readily using conventional photoresistdeposition, exposure and development techniques and conventional platingtechniques. Preferably, each connection section is about 300 microns toabout 1000 microns long.

In the next stage of the process, a mask 60 is applied over the surfaceof layer 32 and over the leads. The mask has slots 62 extending in thewidthwise direction W of leads i.e., along the row and transverse to thelengthwise directions of the individual leads. Each slot 62 is inregistration with one row of leads. The width of each such slotcorresponds to the desired lengthwise dimension along the lead of thefrangible section 72 (FIG. 5) to be provided in each lead. Thus, thewidth of each slot 62 may be about 3 to about 30 microns. Although theslots should be registered with the leads, there is no requirement forregistration of the slots and leads in the widthwise direction W of eachrow. Moreover, the required registration between slot and the leads inthe lengthwise direction L need not be particularly precise. Tolerancesof about 50 microns or more normally can be accommodated. Mask 60 may beapplied as a discrete, preformed element, or else may be formed byphotographic techniques on the surface of layer 32. The mask may beformed from any material which will substantially resist the processesto be applied in the succeeding step. For example, the mask may be asheet of molybdenum, or may include a layer of molybdenum on a polymericsubstrate.

In the next stage of the process, radiant energy such as a beam of light82 from laser 80 is directed onto the surface of mask 60 and scannedalong slot 62. The radiant energy ablates or evaporates some of themetal constituting each lead 52. Mask 60 limits application of theradiant energy only to a relatively narrow treatment zone within slot62. Accordingly, a relatively short portion of each lead, at theintersection of the lead and the treatment zone or slot is affected. Theradiant energy from the laser also ablates some of the dielectric layeror polyimide within the treatment zone. After this process, and afterremoval of the mask, each lead incorporates a thin, frangible section 72(FIG. 4) in the area which was disposed within the slot 62. Thewidthwise dimension W of each connection section 52 is substantiallyunaffected by the ablation process, and hence the widthwise dimension ofeach lead is substantially constant within the connection section andfrangible section 72.

After this stage, the dielectric layer 32 is masked on its bottomsurface by a further mask 86 having slots 90 corresponding to thedesired locations of the slots 40 in the dielectric layer. Each suchslot 90 in the mask is aligned with the connection sections andfrangible regions 72. The assembly is then subjected to further ablationby radiant energy directed through slot 90, thereby forming the slots 40(FIG. 5) in alignment with the connection sections of the leads and inalignment with the frangible regions. The radiant energy applied toprovide this ablation typically includes a KrF laser operating underconditions which will substantially ablate the dielectric material suchas polyimide of layer 32 but which will not substantially affect thematerial of the leads. Following formation of the slots, a compliantlayer 102 is applied on the bottom surface of layer 32. Layer 102 may beapplied by lamination or by coating techniques such as silk screening.Layer 102 desirably is formed from a complaint material such as anelastomer or a gel layer 102 has gaps corresponding to the slots 40 inlayer 32.

The completed connection component can be used in the same manner as theconnection components described in the '036 International Publication.Thus, each component may be positioned on a semiconductor chip so thatrows of contacts on the chips are aligned with slots 40 and hencealigned with the various rows of leads. During the positioningprocedure, the connection section of each connection section issubstantially maintained in position on the support structure, becauseboth ends of each lead connection sections are supported. Thus, eachconnection section is positioned with respect to the associated contactby positioning of the connection component with respect to the chip.Each lead is then engaged by a bonding tool and more precisely alignedwith the contact on the chip by the bonding tool. As the bonding toolmoves each lead downwardly toward the contact, the frangible section ofthe lead breaks, allowing the lead to move freely into engagement withthe contact, and the connection section is permanently bonded to thechip contact. The resulting assembly provides benefits such as thermalexpansion compensation, testability, and compact size as described inthe '036 International Publication.

Numerous variations and combinations of the features discussed above canbe utilized. Thus, the gaps or slots 40 in the dielectric layer can beformed prior to application of the weakening or ablation treatment tothe leads, as by removing the polyimide from beneath the leads usingrelatively low-intensity radiant energy before ablating portions of theleads. Using this approach, the radiant energy applied to ablate theleads and form the frangible sections may be applied through the slot,from the bottom of the dielectric layer. In further variants, thecompliant layer 102 may be applied before formation of the slots andbefore the initial plating process used to form the leads. The slots maybe formed by ablation or punching before formation of the leads. In thiscase, the slots may be filled with a temporary filter to permit platingof the leads.

In a further embodiment, the light from laser 80 is omitted. Instead,the assembly, with mask 60 thereon, is exposed to an alloying elementwhich will diffuse into the material of the leads and weaken it.Desirably, the alloying agent is adapted to embrittle the material ofthe lead, as by weakening grain boundaries of the lead material- Wherethe lead material is gold or a gold-based alloy, the alloying agent maybe a metal selected from the group consisting of tin, indium, lead,gallium and combinations thereof. Following application of the alloyingagent on the surface of the lead, the assembly may be subjected tobaking at an elevated temperature to accelerate diffusion of thealloying agent into the lead. These alloying agents can be applied in avapor-phase process, such as evaporative coating or sputtering, or elsecan be applied in a liquid-phase process such as electroless plating orelectroplating onto the leads through the slot 52 in the mask 60defining the treatment zone. Here again, the weakening treatment affectsonly the area of each lead at its intersection with the slot ortreatment zone. In a further variant, the weakening treatment may beapplied by immersing the assembly, with the mask 60 thereon, in anetchant or in a reverse electroplating bath. Thus, a positive electricalpotential applied to the leads will cause removal of lead material onlyat the exposed areas. The buses 53 provide electrical continuity in thisstep.

In a further variant, the weakening treatment is applied duringdeposition of the lead-forming material. As shown in FIG. 6, the processstarts with polymer dielectric layer 132 covered by a mask orphotoresist layer 133 having openings 134 corresponding to the leads,further openings 136 corresponding to the terminals and openings 138corresponding to the buses. Each opening 134 thus defines one leadregion. The plating process is begun using the mask in thisconfiguration. After a portion of the plating process, a further mask140 is applied on top of the original mask. Mask 140 is in the form ofelongated strips, of which only one is seen in FIG. 7, each suchelongated strip extending across a row of lead openings 134 of mask 133.Mask 140 is positioned in the area where the weakened frangible sectionsare desired, i.e., in the desired treatment zone extending across plurallead regions. Mask 140 may be applied by conventional lithographictechniques. The plating process is continued after application of mask140. During this portion of the plating process, mask 140 inhibitsdeposition of the lead material, so that the resulting lead has a thinsection in the area covered by mask 140.

As shown in FIG. 8, the dielectric layer or support structure 232 may beprovided with an elongated ridge 233 extending along the treatment zonewhere the frangible sections are to be formed. In this arrangement, theleads are formed by plating material into lead regions 234 (shown inbroken lines) using a mask (not shown) similar to mask 133 of FIG. 6.Here, the upstanding ridge 233 tends to promote formation of a thinsection in the plated material at the intersection of each lead regionwith the ridge.

As illustrated in FIG. 9, the weakening treatment may be applied to acontinuous layer 333 of conductive, lead-forming material such as ametal, as by scoring the metal layer with an elongated die blade or tool337 so as to form a groove 334 in the metal layer, extending partiallythrough the thickness of the layer. Alternatively, groove 334 may beformed by chemically etching the continuous layer or laser ablating thelayer. The weakening treatment may be applied using a mask similar tomask 60 (FIG. 3). Here again, the weakening treatment is appliedthroughout an elongated treatment zone extending across a plurality oflead regions 335 (indicated in broken lines in FIG. 9), i.e., across theregions of the continuous sheet which will form the lead connectionsections. The layer is then treated, as by subtractive etching, tosubdivide it into individual leads, each extending within a lead region335. In a further variant, any of the other treatments discussed above,such as application of alloying elements, can be applied to thecontinuous layer 333 prior to formation of the individual leads. Also, atool such as blade 337 can be used to apply a weakening treatment torows of individual leads rather than to a continuous layer. In otherrespects, the process may be as discussed above, and may includeformation of a slot or gap in the dielectric layer by the techniquesdiscussed above.

A component according to a further variant has a dielectric supportstructure including a central portion 442, peripheral portion 444 andslots or gaps 440 extending between the central and peripheral portions.Here again, the leads extend from terminals 448 to connection sections456 aligned with the gaps 440 of the support structure. In thisembodiment,however, the frangible sections 472 of the leads are notaligned with the gaps 440 of the support structure. Rather, thefrangible sections of the leads are offset from the gap 440 in thelengthwise direction of the leads (to the right as seen in FIG. 10) sothat each frangible section is disposed over the peripheral portion 444of the support structure. The outer ends 457 of the connection sectionsoverlap the peripheral region of the support structure. In use, when thebonding tool is engaged with a connection section 456 and forceddownwardly, the outer end of the connection section is pulled off of thesupport structure, and the frangible section 472 breaks. Components inaccordance with this embodiment of the invention can be fabricated insubstantially the same ways as described above. However, the treatmentzone used to form the frangible sections is offset laterally from thegap in the support structure, i.e., offset in the direction transverseto the direction of elongation of the elongated treatment zone 452(indicated in broken lines in FIG. 10) used to form the frangiblesections. Here again, the leads can be formed either before or afterformation of the gap in the support structure.

As these and other variations and combinations of the features discussedabove can be utilized without departing from the present invention asdefined by the claims, the foregoing description of the preferredembodiments should be taken by way of illustration rather than by way oflimitation of the preferred embodiments.

What is claimed is:
 1. A method of making a semiconductor connectioncomponent comprising the steps of forming a plurality of elongated leadsextending over a gap in a support structure, each said lead includinglead-forming material in an elongated, strip-like lead region extendingin a lead direction and having longitudinal edge boundaries extending inthe lead direction, and forming frangible sections in said leads byapplying a weakening treatment to lead-forming material throughout anelongated treatment zone extending across a plurality of said leadregions transverse to said lead directions, whereby said weakeningtreatment is applied across the longitudinal edge boundaries of saidleads.
 2. A method as claimed in claim 1 wherein said lead regionsextend side-by-side, parallel to one another in a common lead directionand said treatment zone is straight and extends transverse to saidcommon lead direction.
 3. A method as claimed in claim 1 wherein saidlead-forming step includes the step of depositing lead-forming materialwithin said lead regions.
 4. A method as claimed in claim 3 wherein saidstep of applying said weakening treatment is performed during saiddepositing step.
 5. A method as claimed in claim 3 wherein said step ofapplying said weakening treatment is performed after said depositingstep.
 6. A method as claimed in claim 1 wherein said step of formingsaid leads includes the step of subdividing a continuous layer of saidlead-forming material into said leads.
 7. A method as claimed in claim 6wherein said step of applying said weakening treatment is performedbefore said subdividing step.
 8. A method as claimed in claim 6 whereinsaid step of applying said weakening treatment is performed after saidsubdividing step.
 9. A method as claimed in claim 1 wherein said step ofapplying said weakening treatment includes the step of applying radiantenergy throughout said treatment zone.
 10. A method as claimed in claim9 wherein said step of applying radiant energy includes the step ofdirecting radiant energy into a mask having a slot corresponding to saidtreatment zone.
 11. A method as claimed in claim 9 wherein said step ofapplying radiant energy includes the step of scanning a beam of radiantenergy across said treatment zone so that said beam evaporateslead-forming material from each lead region at an intersection of suchlead region with the treatment zone.
 12. A method as claimed in claim 1wherein said step of applying said weakening treatment includes the stepof providing a mask having a slot corresponding to said treatment zoneand applying a treating material to said lead regions through said slotso that said treating material contacts lead-forming material atintersections between said lead regions and said treatment zone.
 13. Amethod as claimed in claim 12 wherein said treating material is anetchant, said etchant removing material from each said lead region ateach said intersection.
 14. A method as claimed in claim 12 wherein saidtreating material is an alloying agent, said alloying agent merging withthe lead-forming material at each said intersection to form an alloytherewith.
 15. A method as claimed in claim 14 wherein said lead-formingmaterial includes a metal and said alloying agent weakens said metal atgrain boundaries.
 16. A method as claimed in claim 14 wherein saidlead-forming material includes gold and said alloying agent is selectedfrom the group consisting of tin, indium, lead, gallium and combinationsthereof.
 17. A method as claimed in claim 14 wherein said step ofapplying said treating material includes the step of providing saidalloying agent in a vapor phase.
 18. A method as claimed in claim 1wherein said step of forming said leads includes the step of depositingsaid lead-forming material on a surface of said support structure, saidstep of providing a weakening treatment including the step of providinga ridge on said support structure extending throughout said treatmentzone and protruding from said surface of said support structure so thatsaid ridge forms an indentation in said deposited lead-forming materialin said treatment zone.
 19. A method as claimed in claim 18 furthercomprising the step of removing a portion of said support structureincluding said ridge to form each said gap in said support structure.20. A method as claimed in claim 1 wherein said step of applying aweakening treatment includes the step of mechanically engaging a toolwith lead-forming material in said treatment zone.
 21. A method asclaimed in claim 1 further comprising the step of removing a portion ofsaid support structure to form said gap so that said gap is in registrywith said lead regions.
 22. A method as claimed in claim 1 wherein saidtreatment zone is aligned with said gap.
 23. A method as claimed inclaim 1 wherein said treatment zone is offset from said gap.